1 天津大学微电子学院, 天津 300072
2 天津市成像与感知微电子技术重点实验室, 天津 300072
使用网络分析仪测量了宽频带200 MHz~10 GHz内葡萄糖水溶液的介电特性。测量结果表明,当频率不变时,葡萄糖水溶液的介电常数和电导率均随葡萄糖浓度的增大而减小。单阶Debye模型和二阶多项式被用于拟合各浓度下葡萄糖水溶液介电特性的测量数据,有效量化了介电特性随浓度和频率的变化关系。基于Debye模型参数建立了三维耳垂色散模型和天线收发结构。仿真结果表明,S21信号与葡萄糖浓度之间在相当宽的频带范围内都保持着稳定的、规律性的响应关系,该响应关系可通过二次多项式表达。基于S21的微波无创血糖检测方法可用于未知血糖浓度的评估。
探测器 无创血糖浓度检测 介电特性 葡萄糖水溶液 Debye模型 色散建模 S21 激光与光电子学进展
2020, 57(23): 230401
1 牡丹江师范学院化学化工学院, 牡丹江 157011
2 黑龙江省新型碳基功能与超硬材料重点实验室, 牡丹江 157011
采用一步溶剂热法合成了Bi4Ti3O12/BiOBr复合光催化剂, 采用X-射线衍射仪(XRD)、扫描电子显微镜(SEM)、比表面积及孔径测定仪(BET)以及紫外可见 漫反射光谱仪(DRS)等对样品的组成、形貌及可见光催化性能等进行了表征, 讨论了合成条件对样品光催化活性的影响, 探究了光催化反应过程中的活性物种 及反应机理。研究结果表明, Bi、Ti、Br的投料比为10∶7∶5、乙二醇为溶剂、聚乙烯吡咯烷酮为表面活性剂且加入量为0.2 g时, 合成样品具有较高的光催 化活性和较好的循环稳定性。在7 W LED灯照射140 min后, 光催化剂对罗丹明B(RhB)的降解率达到85.1%。?O-2与h+在降解过程中起主要作用。
溶剂热法 复合材料 光催化 可见光 solvothermal method composite material photocatalysis BiOBr BiOBr visible light
强激光与粒子束
2020, 32(4): 043202
Author Affiliations
Abstract
1 Shandong Provincial Key Laboratory of Multi-photon Entanglement and Manipulation, Department of Physics and Optoelectronic Engineering, Weifang University, Weifang 261061, China
2 Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Using two-step growth method and buffer layer annealing treatment, the double heterojunction structures of In0.82Ga0.18epilayer capped with InAs0.6P0.4layer were prepared on InP substrate by low pressure metal organic chemical vapor deposition (LP-MOCVD). Based on the high quality In0.82Ga0.18As structures, the In0.82Ga0.18PIN photodetector with cut-off wavelength of 2.56 μm at room temperature was fabricated by planar semiconductor technology, and the device performance was investigated in detail. The typical dark current at the reverse bias VR=10 mV and the resistance area product R0A are 5.02 μA and 0.29 Ω·cm2at 296 K and 5.98 nA and 405.2 Ω·cm2at 116 K, respectively. The calculated peak detectivities of the In0.82Ga0.18As photodetector are 1.21×1010cm·Hz1/2/W at 296 K and 4.39×1011cm·Hz1/2/W at 116 K respectively, where the quantum efficiency η=0.7 at peak wavelength is supposed. The results show that the detection performance of In0.82Ga0.18As prepared by two-step growth method can be improved greatly.
Author Affiliations
Abstract
1 Department of Physics and Electronic Science, Weifang University, Weifang 261061, China
2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
InAs0.6P0.4epilayers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on InP (100) substrate are investigated. The influence of growth temperature on crystalline quality of InAs0.6P0.4epilayer is characterized by scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL) spectra, and the Raman properties are analyzed by Raman scattering spectrum. The characterization results show that the crystalline quality and Raman property of InAs0.6P0.4epilayers have close relation to the growth temperature. It indicates that 530 °C is the optimum growth temperature to get good quality and properties of InAs0.6P0.4epilayers.
光电子快报（英文版）
2014, 10(4): 269
Author Affiliations
Abstract
1 Department of Physics and Electronic Science, Weifang University, Weifang 261061, China
2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
4H-SiC/SiO2nanowires are synthesized and the temperature-dependent photoluminescence (PL) properties of the nanowires are studied. Their structure and chemical composition are studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Raman spectra. At room temperature, an ultraviolet PL peak and a green PL band are observed. From the PL spectrum measured in the temperature range from 80 K to 300 K, the free excition emission, donor bound excition emission and their multiple-phonon replicas have been observed in ultraviolet region, and their origins have been identified. Moreover, it has been found that the temperature dependence of the free exciton peak position can be described by standard expression, and the thermal activation energy values extracted from the temperature dependence of the free exciton and bound exciton peak integral intensity are about 40 meV and 181 meV, respectively.
光电子快报（英文版）
2014, 10(3): 168
1 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春130033
2 北京城市学院 信息学部, 北京100083
采用热化学气相沉积的方法在选择性液相外延方法制备的GaAs微尖上生长碳纳米管。利用扫描电子显微镜以及拉曼光谱对生长的碳纳米管进行表征。结果表明: GaAs微尖在高温下重新结晶成条状梯形GaAs阵列, 生长的碳纳米管连接在相邻的GaAs阵列之间, 形态规整, 具有较好的石墨微晶结构。在此基础上, 提出在微尖上生长纳米管的模型, 为实现微纳器件互联提供了一种新方法。
碳纳米管 热化学气相沉积 选择液相外延 carbon nanotubes T-CVD GaAs GaAs liquid phase epitaxy
1 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春 130033
2 中国科学院大学, 北京 100039
通过直流磁控反应溅射制备了氮化铝(AlN)薄膜, 研究了沉积条件与氮化镓(GaN)缓冲层对薄膜质量的影响。利用X-射线衍射仪(XRD)和扫描电镜(SEM)表征了AlN薄膜的晶体结构和表面形貌。XRD研究结果表明, 低工作压强、短靶距和适当的氮气偏压有利于(002)择优取向的AlN薄膜沉积。随着沉积时间的增加, 沉积在50 nm厚的GaN缓冲层上的AlN薄膜的(002)面的衍射峰的半高宽急剧减小, 而沉积在1 μm厚的GaN薄膜上的AlN薄膜的(002)面的衍射峰的半高宽几乎不变。SEM测试结果表明: 在沉积的初期, 沉积在1 μm厚的GaN薄膜上的AlN薄膜的(002)面的晶粒大小分布比沉积在50 nm厚的GaN缓冲层上的AlN薄膜的均匀, 而随着沉积时间的增加, 它们的晶粒大小分布几乎趋向一致。
GaN缓冲层 晶体结构 晶粒尺寸 AlN AlN GaN buffer layer crystal structure grain size
1 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春 130033
2 中国科学院 研究生院, 北京 100039
采用对a-AlGaN表面沉积SiO2纳米颗粒制备工艺得到了金属-半导体-金属(MSM)结构的a-AlGaN紫外探测器。与没有沉积SiO2纳米颗粒的探测器件相比, 沉积SiO2纳米颗粒使器件的暗电流下降了一个数量级, 峰值光谱响应度提高了近3个数量级, 紫外/可见抑制比大于103。
SiO2纳米颗粒 MSM紫外探测器 SiO2 nanoparticles a-AlGaN a-plane AlGaN MSM ultraviolet photodetectors
1 发光学与应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春 130033
2 中国科学院 研究生院, 北京 100039
采用热扩散方法, 对AlN薄膜进行了Si掺杂。利用电子能量散射谱(EDS)以及高温变温电导对薄膜进行了分析。EDS测试结果表明：在1 250 ℃的温度下, 氮化硅(SiNx)作为Si的扩散源, 可以实现对AlN薄膜的Si热扩散掺杂。高温电流-电压(I-V)测试表明：在460 ℃测试温度下, AlN薄膜在热扩散掺杂以后, 其电导从1.9×10-3 S·m-1增加到2.1×10-2 S·m-1。高温变温电导测试表明：氮空位(V3+N)和Si在AlN中的激活能为1.03 eV和0.45 eV。
杂质 氮化物 热扩散 impurities nitrides thermal diffusion
